| 摘要 |
A method for forming a contact plug in a semiconductor device is provided to secure a low junction resistance without the damage of the semiconductor substrate and minimize the diffusion of the impurity to the semiconductor substrate by performing an anneal process with two steps when forming the contact plug. An insulating layer(120) with a contact hole exposing a junction area(114) is formed in the upper part of a semiconductor substrate(100) including a gate. A contact plug(124) is formed by filling the conductive film in a contact hole. A post anneal process of the contact plug and the insulating layer is performed. The post anneal process is performed as the first anneal process and the second anneal process. The first anneal process is performed by using RTP(Rapid Thermal Process) in a soak chamber.
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