| 摘要 |
A method for manufacturing semiconductor device is provided to prevent the leaning of a gate in a post heat treatment by progressing an etching the gate while annealing a gate hard mask layer pattern. A method for manufacturing semiconductor device is comprised of steps: forming a gate insulating layer(102), a gate poly-silicon layer, a gate electrode layer, and gate hard mask layer on the semiconductor substrate upper; forming the gate insulating layer, the gate poly-silicon layer, and the gate electrode layer and gate hard mask layer are formed on the semiconductor substrate; forming a gate hard mask layer pattern(110a) in the region excluding of the gate region by etching the gate hard mask layer by using the lithographically processing with a gate mask; leaving the gate hard mask layer pattern to 5~20% thickness of the gate electrode layer thickness at this time; performing the anneal process to the gate hard mask pattern; forming the gate(114) by etching the gate electrode layer and gate poly-silicon layer with the gate hard mask layer pattern.
|
