发明名称 DUTY DETECTION CIRCUIT AND DLL CIRCUIT USING THE SAME, SEMICONDUCTOR MEMORY DEVICE, AND DATA PROCESSING SYSTEM
摘要 <P>PROBLEM TO BE SOLVED: To provide a duty detection circuit applicable to a multi-phase DLL circuit in which discharge speed and charging speed can be kept constant and a large potential difference appears on the detection line, and to provide a DLL circuit employing it. <P>SOLUTION: The duty detection circuit comprising discharge transistors TR1 and TR2, charging transistors TR3 and TR4, detection lines LDUTYHB and LDUTYLB, and a comparison circuit COMP for detecting the potential difference of the detection lines is further provided with gate control circuits G11-G14 for controlling the discharge transistors TR1, TR2 and the charging transistors TR3, TR4 in response to an internal clock signal in an even cycle. The detection line is charged/discharged in response to the internal clock signal in the even cycle, the duty detection circuit is applicable to a multi-phase DLL circuit and the potential difference appearing on the detection line can be ensured sufficiently. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009021704(A) 申请公布日期 2009.01.29
申请号 JP20070181358 申请日期 2007.07.10
申请人 ELPIDA MEMORY INC 发明人 KUROKI KOJI;TAKAI YASUHIRO
分类号 H03L7/085;H03K5/05;H03L7/081 主分类号 H03L7/085
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