发明名称 Semiconductor integrated circuit device
摘要 Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.
申请公布号 US7547971(B2) 申请公布日期 2009.06.16
申请号 US20050202352 申请日期 2005.08.12
申请人 RENESAS TECHNOLOGY CORP.;HITACHI ULSI SYSTEMS CO., LTD. 发明人 SHINOZAKI MASAO;NISHIMOTO KENJI;AKIOKA TAKASHI;KOHARA YUTAKA;ASARI SANAE;MIYATA SHUSAKU;NAKAZATO SHINJI
分类号 H01L23/48;H01L21/60;H01L23/485;H01L23/528 主分类号 H01L23/48
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