发明名称 Enhanced etching processes using remote plasma sources
摘要 Methods of etching a patterned substrate may include flowing an oxygen-containing precursor into a first remote plasma region fluidly coupled with a substrate processing region. The oxygen-containing precursor may be flowed into the region while forming a plasma in the first remote plasma region to produce oxygen-containing plasma effluents. The methods may also include flowing a fluorine-containing precursor into a second remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the second remote plasma region to produce fluorine-containing plasma effluents. The methods may include flowing the oxygen-containing plasma effluents and fluorine-containing plasma effluents into the processing region, and using the effluents to etch a patterned substrate housed in the substrate processing region.
申请公布号 US9362130(B2) 申请公布日期 2016.06.07
申请号 US201414186059 申请日期 2014.02.21
申请人 Applied Materials, Inc. 发明人 Ingle Nitin K.;Lubomirsky Dmitry;Chen Xinglong;Venkataraman Shankar
分类号 H01L21/3065;H01J37/32 主分类号 H01L21/3065
代理机构 Kilpatrick Townsend & Stockton LLP 代理人 Kilpatrick Townsend & Stockton LLP
主权项 1. A method of etching a patterned substrate, the method comprising: flowing an oxygen-containing precursor into a first remote plasma region fluidly coupled with a substrate processing region while forming a plasma in the first remote plasma region to produce oxygen-containing plasma effluents; flowing a fluorine-containing precursor into a second remote plasma region fluidly coupled in series between the first remote plasma region and the substrate processing region while forming a plasma in the second remote plasma region to produce fluorine-containing plasma effluents, wherein the fluorine-containing precursor bypasses the first plasma region; flowing the oxygen-containing plasma effluents into the second remote plasma region during formation of the plasma in the second remote plasma region to mix with the fluorine-containing plasma effluents; flowing the oxygen-containing plasma effluents and fluorine-containing plasma effluents into the processing region together from the second remote plasma region; and etching a patterned substrate housed in the substrate processing region with the oxygen-containing and fluorine-containing plasma effluents.
地址 Santa Clara CA US