发明名称 |
Enhanced etching processes using remote plasma sources |
摘要 |
Methods of etching a patterned substrate may include flowing an oxygen-containing precursor into a first remote plasma region fluidly coupled with a substrate processing region. The oxygen-containing precursor may be flowed into the region while forming a plasma in the first remote plasma region to produce oxygen-containing plasma effluents. The methods may also include flowing a fluorine-containing precursor into a second remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the second remote plasma region to produce fluorine-containing plasma effluents. The methods may include flowing the oxygen-containing plasma effluents and fluorine-containing plasma effluents into the processing region, and using the effluents to etch a patterned substrate housed in the substrate processing region. |
申请公布号 |
US9362130(B2) |
申请公布日期 |
2016.06.07 |
申请号 |
US201414186059 |
申请日期 |
2014.02.21 |
申请人 |
Applied Materials, Inc. |
发明人 |
Ingle Nitin K.;Lubomirsky Dmitry;Chen Xinglong;Venkataraman Shankar |
分类号 |
H01L21/3065;H01J37/32 |
主分类号 |
H01L21/3065 |
代理机构 |
Kilpatrick Townsend & Stockton LLP |
代理人 |
Kilpatrick Townsend & Stockton LLP |
主权项 |
1. A method of etching a patterned substrate, the method comprising:
flowing an oxygen-containing precursor into a first remote plasma region fluidly coupled with a substrate processing region while forming a plasma in the first remote plasma region to produce oxygen-containing plasma effluents; flowing a fluorine-containing precursor into a second remote plasma region fluidly coupled in series between the first remote plasma region and the substrate processing region while forming a plasma in the second remote plasma region to produce fluorine-containing plasma effluents, wherein the fluorine-containing precursor bypasses the first plasma region; flowing the oxygen-containing plasma effluents into the second remote plasma region during formation of the plasma in the second remote plasma region to mix with the fluorine-containing plasma effluents; flowing the oxygen-containing plasma effluents and fluorine-containing plasma effluents into the processing region together from the second remote plasma region; and etching a patterned substrate housed in the substrate processing region with the oxygen-containing and fluorine-containing plasma effluents. |
地址 |
Santa Clara CA US |