| 发明名称 | Deposition of boron and carbon containing materials | ||
| 摘要 | Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film. | ||
| 申请公布号 | US9362109(B2) | 申请公布日期 | 2016.06.07 |
| 申请号 | US201414515395 | 申请日期 | 2014.10.15 |
| 申请人 | ASM IP HOLDING B.V. | 发明人 | Pore Viljami |
| 分类号 | H01L21/02;C23C16/30;C23C16/04;C23C16/32;C23C16/455;H01L21/311 | 主分类号 | H01L21/02 |
| 代理机构 | Knobbe, Martens, Olson & Bear, LLP | 代理人 | Knobbe, Martens, Olson & Bear, LLP |
| 主权项 | 1. A method of depositing a silicon nitride thin film comprising boron and carbon on a substrate in a reaction space comprising: at least one silicon nitride cycle comprising: contacting the substrate with a vapor-phase silicon precursor;contacting the substrate with a nitrogen reactant; and subsequently contacting the substrate with a vapor phase boron precursor, to form a SiNx(By,Cz) thin film, wherein x is from 0.5 to 3.0, wherein y is from 0.1 to 5.0, and wherein z is from 0.1 to 5.0. | ||
| 地址 | Almere NL | ||