发明名称 |
Methods of forming and programming memory devices with isolation structures |
摘要 |
Methods of programming and forming memory devices. Methods of programming include biasing a control gate of a selected memory cell of the memory device to a first voltage, the control gate being over a first conductive region having a first conductivity type and the first conductive region being over a second conductive region having a second conductivity type different than the first conductivity type; biasing the second conductive region to a second voltage to forward bias the junction from the second conductive region to the first conductive region; and injecting electrons into a charge-storage node of the selected memory cell from the second conductive region. The first conductive region and the second conductive region are contained within a dielectric isolation structure in which at least the selected memory cell is contained. |
申请公布号 |
US9361981(B2) |
申请公布日期 |
2016.06.07 |
申请号 |
US201414179164 |
申请日期 |
2014.02.12 |
申请人 |
Micron Technology, Inc. |
发明人 |
El-Kareh Badih;Forbes Leonard |
分类号 |
G11C11/34;G11C16/04;H01L21/28;H01L27/115;H01L29/66;H01L29/788;G11C16/10 |
主分类号 |
G11C11/34 |
代理机构 |
Dicke, Billig & Czaja, PLLC |
代理人 |
Dicke, Billig & Czaja, PLLC |
主权项 |
1. A method of programming a memory device, comprising:
biasing a control gate of a selected memory cell of the memory device to a first voltage, the control gate being over a first conductive region having a first conductivity type and the first conductive region being over a second conductive region having a second conductivity type different than the first conductivity type; biasing the second conductive region to a second voltage to forward bias a junction from the second conductive region to the first conductive region; and injecting electrons into a charge-storage node of the selected memory cell from the second conductive region; wherein the first conductive region and the second conductive region are contained within a dielectric isolation structure in which at least the selected memory cell is contained. |
地址 |
Boise ID US |