发明名称 |
Reliable read operation for nonvolatile memory device with resistance material that reads data based on reference current |
摘要 |
Provided is a nonvolatile memory device. The nonvolatile memory device may include a resistive memory cell, a reference current generator which provides a reference current, a reference signal generator which provides a reference signal indicating a reference time for data read based on the reference current, and a read circuit which receives the reference signal and reads data by comparing a ramp-up time of a cell current flowing through the resistive memory cell with the reference time. |
申请公布号 |
US9361977(B2) |
申请公布日期 |
2016.06.07 |
申请号 |
US201514612997 |
申请日期 |
2015.02.03 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Park Mu-Hui |
分类号 |
G11C11/00;G11C13/00;G11C11/56;G11C29/02 |
主分类号 |
G11C11/00 |
代理机构 |
Volentine & Whitt, PLLC |
代理人 |
Volentine & Whitt, PLLC |
主权项 |
1. A nonvolatile memory device comprising:
a resistive memory cell; a reference current generator configured to provide a reference current; a reference signal generator configured to provide a reference signal indicating a reference time for data read based on the reference current; and a read circuit configured to receive the reference signal and to read data by comparing a ramp-up time of a cell current flowing through the resistive memory cell with the reference time. |
地址 |
Suwon-si, Gyeonggi-do KR |