Contact structure of non-planar semiconductor device

摘要

The invention relates to a contact structure of a semiconductor device. An exemplary structure for a semiconductor device comprises an insulation region over a substrate; a gate electrode layer over the insulation region comprising a gate middle line; a first contact structure over the insulation region adjacent to the gate electrode layer comprising a first middle line, wherein the first middle line and the gate middle line has a first distance; and a second contact structure over the insulation region on a side of the gate electrode layer opposite to the first contact structure comprising a second middle line, wherein the second middle line and the gate middle line has a second distance greater than the first distance.

主权项

1. A semiconductor device comprising:
a fin formed over a substrate, the fin having an elongated axis running in a first direction; an insulation region over the substrate, wherein a first portion of the fin is embedded in the insulation region and a second portion of the fin extends above a top surface of the insulation region; a gate electrode layer over the insulation region and the fin; a first gate spacer on a first side of the gate electrode layer and on the fin; a second gate spacer on a second side of the gate electrode layer opposite from the first side of the gate electrode layer, the second gate spacer being on the fin; a source region in the fin at the first gate spacer and extending laterally away from the gate electrode layer; a drain region in the fin at the second gate spacer and extending laterally away from the gate electrode layer; a first contact structure to the source region, the first contact structure comprising a first conductive plug extending through an insulating layer formed over the fin and over the insulation region, wherein the first conductive plug includes a first portion aligned with the elongated axis of the fin and a second portion laterally displaced from the elongated axis of the fin in a direction orthogonal to the elongated axis of the fin and extending over the insulating region, wherein a first distance is between a first middle line of the second portion of the first contact structure and a gate middle line of the gate electrode layer, the source region having a uniform dopant concentration from the first gate spacer to the first contact structure; and a second contact structure to the drain region, the second contact structure comprising a second conductive plug extending through the insulating layer formed over the fin and over the insulation region, wherein the second conductive plug includes a third portion aligned with the elongated axis of the fin and a fourth portion laterally displaced from the elongated axis of the fin in a direction orthogonal to the elongated axis of the fin, the fourth portion over the insulation region on a side of the gate electrode layer opposite to the first contact structure, wherein a second distance is between a second middle line of the fourth portion of the second contact structure and the gate middle line of the gate electrode layer, and the second distance is greater than the first distance, the drain region having a uniform dopant concentration from the second gate spacer to the second contact structure.