Determining and storing bit error rate relationships in spin transfer torque magnetoresistive random-access memory (STT-MRAM)

摘要

Systems and methods to manage memory on a spin transfer torque magnetoresistive random-access memory (STT-MRAM) are provided. A particular method may include determining a performance characteristic using relationship information that relates a bit error rate to at least one of a programming pulse width, a temperature, a history-based predictive performance parameter, a coding scheme, and a voltage level also associated with a memory. The performance characteristic is stored and used to manage a write operation associated with the memory.

主权项

1. An apparatus comprising:
a memory storing a performance characteristic determined from a relationship between two or more of: a bit error rate, a programming pulse width, a history based predictive performance parameter, a temperature, a coding scheme for data, or a voltage level associated with the memory, wherein the programming pulse width is a length of a pulse used to write the data; and a controller in communication with the memory, the controller configured to:
determine the performance characteristic;manage a write operation to the memory based on the performance characteristic and based on a number of data flips that are to be performed in response to a determination that the temperature is above a first threshold value, and wherein the number of data flips is based on an exclusive-OR operation; anddetermine the programming pulse width and subsequently perform one of: a long write operation in response to a determination that the number of data flips is greater than a second threshold value or a short write operation in response to a determination that the number of data flips is less than the second threshold value.