发明名称 |
Light emitting device and method of fabricating the same |
摘要 |
Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside. |
申请公布号 |
US9431377(B2) |
申请公布日期 |
2016.08.30 |
申请号 |
US201314138917 |
申请日期 |
2013.12.23 |
申请人 |
Seoul Viosys Co., Ltd. |
发明人 |
Seo Won Cheol;Lee Joon Hee;You Jong Kyun;Kim Chang Youn;Shin Jin Cheol;Kim Hwa Mok;Lee Jang Woo;Yoon Yeo Jin;Kim Jong Kyu |
分类号 |
H01L33/62;H01L25/075;H01L27/15;H01L33/00;H01L33/46 |
主分类号 |
H01L33/62 |
代理机构 |
H.C. Park & Associates, PLC |
代理人 |
H.C. Park & Associates, PLC |
主权项 |
1. A light emitting device, comprising:
a substrate; light emitting cells disposed on the substrate, each light emitting cell comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a first connection metal disposed between the substrate and the light emitting cells, the first connection metal electrically connecting the light emitting cells; a second connection metal disposed between the first semiconductor layers and the first connection metal, the second connection metal being electrically connected to the first semiconductor layer; a first electrode pad spaced apart from light emission surfaces of the light emitting cells and disposed on a first surface of the light emitting device opposite to the substrate, wherein the first electrode pad is electrically connected to the first semiconductor layer through the second connection metal; a second electrode pad spaced apart from light emission surfaces of the light emitting cells, wherein the second electrode pad is electrically connected to the second semiconductor layer; and a first insulating layer disposed between the first connection metal and the second connection metal, wherein a portion of the first insulating layer is disposed on a side surface and a bottom surface of the second semiconductor layer. |
地址 |
Ansan-si KR |