发明名称 Light emitting device and method of fabricating the same
摘要 Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.
申请公布号 US9431377(B2) 申请公布日期 2016.08.30
申请号 US201314138917 申请日期 2013.12.23
申请人 Seoul Viosys Co., Ltd. 发明人 Seo Won Cheol;Lee Joon Hee;You Jong Kyun;Kim Chang Youn;Shin Jin Cheol;Kim Hwa Mok;Lee Jang Woo;Yoon Yeo Jin;Kim Jong Kyu
分类号 H01L33/62;H01L25/075;H01L27/15;H01L33/00;H01L33/46 主分类号 H01L33/62
代理机构 H.C. Park & Associates, PLC 代理人 H.C. Park & Associates, PLC
主权项 1. A light emitting device, comprising: a substrate; light emitting cells disposed on the substrate, each light emitting cell comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a first connection metal disposed between the substrate and the light emitting cells, the first connection metal electrically connecting the light emitting cells; a second connection metal disposed between the first semiconductor layers and the first connection metal, the second connection metal being electrically connected to the first semiconductor layer; a first electrode pad spaced apart from light emission surfaces of the light emitting cells and disposed on a first surface of the light emitting device opposite to the substrate, wherein the first electrode pad is electrically connected to the first semiconductor layer through the second connection metal; a second electrode pad spaced apart from light emission surfaces of the light emitting cells, wherein the second electrode pad is electrically connected to the second semiconductor layer; and a first insulating layer disposed between the first connection metal and the second connection metal, wherein a portion of the first insulating layer is disposed on a side surface and a bottom surface of the second semiconductor layer.
地址 Ansan-si KR