Coaxial solder bump support structure

摘要

A solder bump support structure and method of manufacturing thereof is provided. The solder bump support structure includes an inter-level dielectric (ILD) layer formed over a silicon substrate. The ILD layer has a plurality of conductive vias. The structure further includes a first insulation layer formed on the ILD layer. The solder bump support structure further includes a pedestal member formed on the ILD layer which includes a conductive material formed above the plurality of conductive vias in the ILD layer coaxially surrounded by a second insulation layer. The second insulation layer is thicker than the first insulation layer. The structure further includes a capping under bump metal (UBM) layer formed over, and in electrical contact with, the conductive material and formed over at least a portion of the second insulation layer of the pedestal member.

主权项

1. A solder bump support structure comprising:
an inter-level dielectric (ILD) layer formed over a silicon substrate, wherein the ILD layer includes a plurality of conductive vias; a first insulation layer formed on the ILD layer; a pedestal member formed on the ILD layer comprising a conductive material formed above the plurality of conductive vias coaxially surrounded by a second insulation layer in direct physical contact with the conductive material of the pedestal member, wherein the first insulation layer and the second insulation layer are part of a same layer, wherein the first insulation layer extends horizontally from a lower portion of the second insulation layer along and in direct physical contact with a top surface of the ILD layer, and wherein the second insulation layer is thicker than the first insulation layer; and a capping under bump metal (UBM) layer formed over, and in electrical contact with, the conductive material and in direct physical contact with only a portion of an uppermost surface of the second insulation layer of the pedestal member.