| 摘要 |
PURPOSE:To provide a semiconductor manufacturing method by melt recrystallization which can suppress the occurrence of a stress in a formed semiconductor film and can form a flat semiconductor film over an large area. CONSTITUTION:A base material 2 of a material having a melting point or softening point which is lower than that of the semiconductor material and a semiconductor layer 1 formed on the base material 2 are separately heated to molten states by means of heating means 6 and 7 and the semiconductor layer 1 is recrystallized on the base material while the base material is maintained in the molten state.
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