发明名称 |
ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE |
摘要 |
An array substrate and a manufacturing method thereof, and a display device are provided. The array substrate includes: a base substrate (1), a gate line (2), a data line (3), and a thin film transistor (10), which are formed on the base substrate (1); a first planarization layer (5), formed on the base substrate (1), the gate line (2), the data line (11) and the thin film transistor (10), a via hole (12) being formed in the first planarization layer (5), and part of a region of the via hole (12) being corresponding to a drain electrode (4) of the thin film transistor (10); a first electrode (7), formed on the first planarization layer (5) and in the via hole (12), the first electrode being connected with the drain electrode (4); a passivation layer (8), formed on the first electrode (7); and a second electrode (9), formed on the passivation layer (8). |
申请公布号 |
US2016268316(A1) |
申请公布日期 |
2016.09.15 |
申请号 |
US201414769931 |
申请日期 |
2014.12.01 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
KIM Heecheol;CHOI Hyun Sic |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. An array substrate, comprising;
a base substrate; a gate line, a data line, and a thin film transistor, which are formed on the base substrate; a first planarization layer, formed on the base substrate, the gate line, the data line and the thin film transistor, a via hole being formed in the first planarization layer, and part of a region of the via hole being corresponding to a drain electrode of the thin film transistor; a first electrode, formed on the first planarization layer and in the via hole, the first electrode being connected with the drain electrode; a passivation layer, formed on the first electrode; and a second electrode, formed on the passivation layer. |
地址 |
Beijing CN |