发明名称 HIGH INTEGRATED SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a high integrated semiconductor device which is hardly enlarged in size even if semiconductor chips are increased in number by a method wherein wiring boards are arranged nearly in parallel at prescribed intervals, which are assembled into a multiboard structure with a single lead wire. CONSTITUTION:A chip 1 is mounted on a wiring board 2 through the intermediary of adhesive agent or the like, a wiring pattern 3 is provided onto the upside of the board 2, and the front and the rear of the board 2 are electrically connected together to constitute a rigid wiring board. For instance, the rear and the front of a printed board are electrically connected together through a through-hole wiring 4, and the through-hole wirings 4 are connected to the terminals provided onto the chip 1 through a wiring pattern 3 and a bonding wire 5 of the board 2. Solderable lands 4A are formed around the through-hole wirings 4 provided to the front and the rear of the board 2, a solder guide line 4B formed of the same material with the wiring is provided extending from a part near the end of the board 2 to the land 4A, a lead wire 7 and the land 4A are surely soldered to each other even if the gap is narrow.
申请公布号 JPH04280667(A) 申请公布日期 1992.10.06
申请号 JP19910043891 申请日期 1991.03.08
申请人 HITACHI LTD;HITACHI TOBU SEMICONDUCTOR LTD 发明人 NAKAJIMA KOICHI;ENDO TSUNEO
分类号 H01L25/18;H01L25/10;H01L25/11;H05K1/14;H05K3/36 主分类号 H01L25/18
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