| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photomask having a new structure, which has a high contrast of transfer pattern to exposing beam, and is reduced in manufacturing cost by omitting developing step in a transfer pattern forming process, and also to provide a method for manufacturing the same. <P>SOLUTION: The method for manufacturing a photomask including a transfer pattern formed on an inorganic resist layer formed on one surface of a transparent substrate comprises steps of: forming the inorganic resist layer including a first reaction layer formed of a rare earth metal and a second reaction layer formed of a hydrogen-containing dielectric material which makes contact with the first reaction layer; irradiating the inorganic resist layer with energy beam; desorbing hydrogen from the second reaction layer in the area irradiated with the energy beam; and reducing the first reaction layer with the desorbed hydrogen into a hydride. <P>COPYRIGHT: (C)2009,JPO&INPIT |
