| 摘要 |
<p>PURPOSE:To prevent the short circuit between electrodes due to a pin hole in a gate insulating film by further using a high resistance semiconductor layer other than the gate insulating film as the inter-layer insulating film of an accu mulation capacitor. CONSTITUTION:A chromium film is formed on a glass base plate 11 and patterned, whereby a gate line 1(N), a gate electrode 2(M, N) and an accumulation capacitor 12 consisting of chromium are formed. A silicon nitride film as a gate insulating film 7, an amorphous silicon hydride film 8, and an amorphous silicon hydride film 9 doped with phosphorous are successively formed. The amorphous silicon hydride film 8 and the amorphous silicone film 9 are patterned to form lands in the crossing point of the gate line 1 and an accumulation capacitor line 12N with a source line 3(M) on the gate electrode 2, and further in the superposed part of a picture element electrode 6(M, N) with the accumulation capacitor 12(N). An ITO film which is a transparent electrode is formed and then patterned into the picture element electrode 6(M, N).</p> |
