| 摘要 |
1,050,659. Coating with metals &c. CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE. April 24, 1964 [April 24, 1963], No.17005/64. Heading C7F. [Also in Division H1] A semi-conductor element is formed by vapour depositing an epitaxial layer of Ag or Cu on a mica substrate, vapour depositing a layer of Au or Pt on the Ag or Cu layer, vapour depositing a Cr, Mo, W, Ta or Nb layer on the Au or Pt layer, dipping in nitric acid to dissolve the Ag or Cu and separate the mica from the Au or Pt layer, heat treating the Au or Pt, and Cr layers under vacuum, and finally depositing a silicon or germanium layer e.g. by chemical decomposition of e.g. trichlorogermane or by vapour deposition or trichlorosilane. In a modification the Au or Pt layer may be omitted, and potassium cyanide is used to dissolve the Ag layer. |
