SEMICONDUCTOR DEVICE, LIGHT-EMITTING DIODE AND TRANSISTOR STRUCTURE MAKING USE OF RESONANT TUNNELING

摘要

2085361 9219017 PCTABS00017 The present invention provides a semiconductor device comprising: a first layer of semiconductor material of the one conductivity type; a second layer of semiconductor material of the other conductivity type; and a structure for resonant tunneling between the first and second layer of semiconductor material. The resonant tunneling structure (RTS) makes use of the extremely rapid tunneling effect wherein charge carriers tunnel through an energy barrier. The tunneling time is decisive here and not the radiative recombination. Extremely rapid optical oscillations can be obtained herewith with a frequency for instance in the region of 750 GHz. Electrical oscillations of such frequencies have already been realized.