| 摘要 |
PURPOSE: To reduce production cost and raise efficiencies of a thin-film transistor, driver array, radiation sensor and LED, using amorphous Si and its alloys. CONSTITUTION: On an amorphous substrate 6, an amorphous Si hydride alloy- made n-type region 4 is formed, an amorphous Si hydride alloy-made i-type region 3 and an amorphous Si hydride alloy-made p-type region 2 are formed in this order one on top of another. Both the amorphous Si hydride alloy-made n-type region 4 and the amorphous Si hydride alloy-made p-type region 2 are irradiated by a scanning laser to crystalline the n- and p-type regions, without substantially affecting the i-type region, and to increase the electric conductivities of the p- and n-layers. |
