| 摘要 |
<p>1,219,774. Semi-conductor devices. MITSUBISHI DENKI K.K. 15 Nov., 1968 [15 Nov., 1967; 20 Sept., 1968], No. 54314/68. Heading H1K. A semi-conductor device comprises a flat semi-conductor element wafer having attached to the outer peripheral portion of at least one of its main faces a reinforcing element 30 in the form of a ring or frame composed of material of the same type as that of the wafer or at least a material having the same coefficient of thermal expansion as the material of the wafer. This reinforcing element is joined to the semiconductor wafer by a brazed joint or solder, layers 22, 24, 32 of aluminium having been previously vapour deposited on the surfaces. For a silicon wafer the reinforcing element may be composed of silicon, germanium, molybdenum, tungsten, a cobalt-nickel-iron alloy, alumina or zirconia. The wafer may also be made of germanium, gallium arsenide or any compound of III/V elements. The wafer and element are finally shaped as required by sand blasting and etching, and silicone rubber 34 is disposed around the periphery of the device which is then encased. The device may be a power diode, a thyristor or a transistor.</p> |
