| 摘要 |
In the operation of an information storage tube including a storage target, comprising a conducting or semiconductor substrate, an insulating storage layer and a conducting grid or mesh, means for scanning the target with an electron beam, and a secondary electron collector adjacent to the target; the storage target is primed by scanning the target with a low velocity beam in a series of steps while maintaining the conducting grid at a low positive potential (e.g., +5 volts) and applying successively higher positive potentials to the substrate, until the difference between the potentials of the substrate and the conducting mesh is about 25 volts, and then reducing the substrate potential enough to reduce the storage layer potential to zero, preparatory to writing. Now, the signal information can be (1) stored on the storage layer, by scanning the target with a high velocity writing beam; (2) read out no-destructively, by scanning the target with a low velocity reading beam; and (3) erased, by scanning the target with a high velocity erasing beam.
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