| 摘要 |
<p>1,211,978. Semi-conductor devices. WESTINGHOUSE ELECTRIC CORP. 24 April, 1969 [31 May, 1968], No. 20927/69. Heading H1K. First and second contacts on one face of a semi-conductor element are formed to lie in different planes so that one or both of them may be pressure-contacted by a flat-surfaced electrode or electrodes. In the transistor shown the separate emitter regions 36 stand proud of the surface of the base region so that emitter contacts 34 may be pressure-contacted by anelectrode 42. Connection is made to the combshaped base electrode 38 by a terminal and lead 48, 50. Protective silicon oxide 58 lies over most of the base contact. The double pressure contact of Fig. 6 is used in a variant structure in which the emitter and base electrodes take the form of combs which are interdigitated though lying in slightly different planes. Manufacture of the emitter regions is described. The invention may also be applied to thyristors.</p> |
