| 摘要 |
<p>1426543 Semi-conductor devices RAYTHEON CO 6 May 1974 [18 May 1973] 19863/74 Heading H1K A semi-conductor device package comprises an electrically conducting base 10, an electrically conducting planar member 13 on the base 10 and in electrical contact therewith, a thermally conducting but electrically insulating support 11 for the semi-conductor device 12 mounted on the base 10 in an aperture 14 in the planar member 13, and a conductive coating (31), Fig. 6 (not shown), on the surface of the support 11 remote from the base 10. The device is completed by a conducting spacer frame 17, an insulating apertured plate 18 having metallized regions 19, 20 for making connections to electrodes of the device 12, an insulating sealing frame 21, a cover 38 and leads 22, 23 which are hermetically sealed together. The base 10 may be made of copper and the planar member 13 of nickel or molybdenum and the support 11 is alumina or beryllia. The components are brazed together using eutectic Cu-Ag solder. MOS capacitors (29, 30) are used for impedance matching and leads of gold-plated copper are used. The device 12 may be a microwave power transistor and its use in a phased array radar system is described. Dimensions of the components of the package are given.</p> |
