MEMORY ARRAY

摘要

The memory storage network has a reduced internal capacity. It is made up of a substrate having a first conductor arrangement which forms a first dimension on the substrate and a first internal capacity. A second conductor arrangement is formed on the substrate orthogonally to the first conductor arrangement. The second conductor arrangement forms a second dimension on the substrate and has a second internal capacity less than the first internal capacity. A data storage system is situated at one or several points of intersection of the first and second conductor arrangements. The combined internal capacity of the network is reduced without changing the number of storage elements by choosing the second dimension to be greater than the first dimension. The capacity of a diffusion linein a semiconductor block is approx. ten times greater than a metallic line on the block. If the 'bit' lines diffused are shortened and the metallic 'word' lines are extended the capacity of the read only memory is diminished.