发明名称 |
PREPARATION OF BORON NITRIDE OF CUBIC SYSTEM |
摘要 |
PURPOSE:To prepare easily a boron nitride of cubic system having a large crystal particle size, by heating Sr3B2N4 or Ba3B2N4 and hexagonal boron nitride under the thermodynamic stable pressure of the boron nitride of cubic system at >= a specific temperature. CONSTITUTION:Sr3B2N4 or Ba3B2N4 and hexagonal boron nitride are heated under the thermodynamic stable pressure of boron nitride of cubic system at >=125 deg.C. By this method, since the tolerance value widths of temperature and pressure range are wide, the growth rate of crystal particle is controlled easily, so that high-purity and high-quality boron nitride crystal of cubic system having large particle diameter can be produced easily. |
申请公布号 |
JPS57156399(A) |
申请公布日期 |
1982.09.27 |
申请号 |
JP19810040564 |
申请日期 |
1981.03.20 |
申请人 |
KAGAKU GIJIYUTSUCHIYOU MUKIZAISHITSU KENKYUSHO |
发明人 |
ENDOU TADASHI;IWATA MINORU;FUKUNAGA OSAMU |
分类号 |
B01J3/06;C30B9/00;C30B29/38 |
主分类号 |
B01J3/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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