| 摘要 |
PURPOSE:To improve the uniformity of the epitaxial grown film thickness of various semiconductors, particularly, an In group compound semiconductor crystal, by the vapor phase growth device with an introducing pipe of the same structure as a first introducing pipe by setting up a gas diffuser to the gas jet of the first introducing pipe which mounting a gas flow control member, which can be moved freely in the direction of a gas flow. CONSTITUTION:A hood pipe 21 is fitted to the gas jet section of the introducing pipe 4 so as to be in contact with the outer circumference of the introducing pipe 4 and cover it. When pins 23 are entered into grooves 22, the hood pipe 21 can be slid in the direction of the gas flow, and can be fixed by slightly turning the hood pipe 21 and fitting the pins 23 into indentations 24. Consequently, the actual gas jet can also be moved in the direction of the gas flow by sliding the hood pipe 21 in the direction of the gas flow. As a result, when the gas jet is positioned on the substrate side more than the gas diffuser 9, the extent of diffusion is reduced because the diffused gas flow collides with the inner wall of the hood pipe 21. Accordingly, an angle of extent of diffusion can be controlled by sliding the hood pipe 21. |
