| 摘要 |
PURPOSE:To obtain stable high voltage resistant property of semiconductor integrated circuit device by suppressing generation of inverse layer or depletion layer to the side of polycrystalline silicon substrate. CONSTITUTION:A groove for separating dielectric material is formed to an N type single crystal silicon 1, an N type high concentration region 2 is formed by diffusion of antimony and a separated SiO2 film 3 is formed by thermal oxidation method. Next, a polycrystalline silicon substrate 4 is deposited. In the initial stage of deposition, As is doped by AsH3 in order to form a high concentration region 11 and ordinary polycrystalline silicon substrate 4 is overlapped. Islands are separated by the polishing process, these are finished in the desired thickness, the surface SiO2 film 5 is formed at the main surface, the P type diffusion layers 6a and 6b are formed with boron by the selective diffusion method, while the N type diffusion layers 7a and 7b with phosphor. After the specified bores are opened to the surface SiO2 film 5, an aluminum thin film is formed and metal wirings 8a, 8b, 8c and 8d are formed. |
