| 摘要 |
PURPOSE:To heat a silicon substrate within a short period of time by forming a high melting point metal layer or high melting point metal silicide layer on the surface of semiconductor substrate and irradiating the rear side thereof with infrared ray for heating. CONSTITUTION:A high melting point metal layer or high melting point metal silicide layer 4 is formed on the surface of a silicon substrate 1 or a polycrystal silicon layer formed on the substrate 1. The rear side of substrate 1 is irradiated with the infrared ray for a short period of 120sec or less at a temperature range of 900-1,300 deg.C. The effective heat processing can be realized through irradiation to the rear side 5 with the infrared ray 6 because the infrared ray enters easily into the substrate 1, it easily transmits therein and it can be used effectively due to reflection at the surface 2. |
