发明名称 SEMICONDUCTOR PRESSURE SENSOR
摘要 PURPOSE:To enlarge the degree of freedom of the arrangement of gauge resistors and increase the measuring accuracy by reducing the dispersion by a method wherein the longitudinal direction of the gauge resistor is composed of two pairs of diffused resistors rectangularly intersected with each other, and the outer pressure is calculated out by detecting the amount of changes of the four gauge resistors in a Wheatstone bridge circuit. CONSTITUTION:When the surface rientation of an Si substrate is decided as the plane (111), and the longitudinal direction of the gauge resistor is taken to the rectangularly intersected direction such as the axis <-110> and the axis <11-2>, the gauge resistors 21' and 23' of the axis <-110> do not receive the stress of the X axis (sigma x=0) but receive only the stress of the Y axis (sigma Y), and accordingly their values vary to plug. While, the gauge resistors 22' and 24' of the axis <11-2> do not receive the stress of the Y axis (sigma y=0) but receive only the stress of the X axis (sigmax), resulting in variation to minus. The titled device of a high accuracy can be obtained by detecting the amount of variation by the Wheatstone bridge circuit and then converting it into pressure.
申请公布号 JPS59154075(A) 申请公布日期 1984.09.03
申请号 JP19830027991 申请日期 1983.02.22
申请人 NIPPON DENKI KK 发明人 SAWAKI HISASHI;ADACHI ITSUROU;SHIBATA TETSUO
分类号 H01L29/84;(IPC1-7):H01L29/84 主分类号 H01L29/84
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