| 摘要 |
PURPOSE:To form a p-type single crystal thin film at low temperature, by subjecting a mixed gas consisting of a fluorosilane, a silane and a compound of group III to photolysis to form a single crystal thin film. CONSTITUTION:A mixed gas consisting of a fluorosilane, a silane, a compound of group III and preferably hydrogen is subjected to photolysis to form a p-type single crystal thin film. In this method, the p-type single crystal thin film is formed even at low temperature of a substrate of <=300 deg.C. A compound shown by the formula I (n is 1-3) or Si2F6 is useful as the fluorosilane used. A monosilane, disilane or trisilane shown by the formula II (m is 1-3) is effective ly used as the silane. B2H6 (diborane) is used as the compound of group III. In the method, the single crystal thin film is subjected to epitaxial growth on a single crystal substrate as an especially preferable form. The photolysis by ultraviolet rays is especially preferable and sensitization reaction of photoly sis may be used. |
