| 摘要 |
PURPOSE:To decrease the growth rate of an active layer, and to improve the controllability of the film thickness of the active layer by forming a mesa in height of 2mum or more onto a semiconductor substrate, shaping an N-GaAs current blocking layer with an opening in the upper section of the mesa and forming double hetero-structure on the current blocking layer. CONSTITUTION:An N-GaAs current blocking layer 2 is grown so as to shape a ridge in the same height as the mesa of a P-GaAs substrate 1 through an MOCVD method or an MBE method to the substrate 1 with the mesa in height of 2mum of more. Double hetero-structure is grown on the layer 2 through an LPE method. A P-AlyGa1-yAs layer 3 is brought to 0.25mum, an AlxGa1-xAs active layer 4 to 0.05mum, an N-AlyGa1-yAs layer 5 to 1.8mum and an N-GaAs layer 6 to 5mum on the ridge in the film thickness of each layer of double hetero-structure. The growth of the upper section of the ridge is inhibited though the growth of the side surface of the ridge is promoted by the anisotropy of a crystal plane on the growth of the active layer. The growth of the side surface of the ridge is further accelerated with the increase of the height of the ridge, and the growth rate of the active layer on the ridge is further decreased. Accordingly, the active layer can be grown for a prolonged time, thus improving both controllability and reproducibility, then easily manufacturing a high-output semiconductor laser.
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