| 摘要 |
PURPOSE:To make it possible to obtain an solid state image pickup element characterized by simple design and a high yield rate, by providing a region, whose concentration is higher than that of a substrate and conductivity is the same as that of the substrate at the channel part of a vertical register and the channel part of a horizontal register, which is in contact with the vertical register, thereby omitting the necessity for narrowing the channel part of the horizontal register, which is in contact with the vertical register. CONSTITUTION:At the surface of a vertical register and the surface of a part of a horizontal register, which is in contact with the vertical register, a P-type region 5, whose concentration is higher than that of a substrate, is provided. Owing to the high concentration of P-type region 5, the capacitance per unit area of the vertical register is increased. Therefore, the width of a channel can be made narrow in comparison with a conventional example. At the surface of a channel region where the vertical register is contacted with the horizontal register, a high concentration P-type region is present. Therefore, a potential well 7 of the horizontal register can be made sufficiently shallow without narrowing said part. Thus charge transfer to the horizontal register from the vertical register becomes smooth, and the charge does not remain even in transfer to an output circuit from the horizontal register. |
