| 摘要 |
PURPOSE:To improve element characteristics, manufacture larger panels, simplify manufacturing processes, and enhance product reliability by a method wherein an organic thin film composed by plasma-aided polymerization serves as an insulating thin film. CONSTITUTION:On a glass substrate 10, a copper thin film 11 is formed, equipped with a 4mum-wide protrusion 111, to serve as a lower conducting thin film. A plasma-polymerized acetonitrile thin film 12 to serve as an insulating thin film is formed on the entire surface except on a portion planned for the leadout of an electrode on the copper thin film 11. For the formation of a 0.05mum-thick plasma-polymerized acetonitrile thin film 12, said plasma-aided polymerization should be accomplished at an acetonitrile flow rate of 80cm<3>/mm, substrate temperature of 100 deg., device pressure of 0.5Torr, RF power of 100W, and process time of 10min. Next, a 4mum-wide chromium thin film 13 to serve as an upper conducting thin film and a transparent conductive film to serve as a picture element electrode 14 are formed in that order for the construction of a 16mum<2>-large MIM element.
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