| 摘要 |
PURPOSE:To remarkably curtail the processing time and improve throughput by keeping the temperature of chamber and allowing only the wafers to be heated in the wafer heating process by the short-term annealing apparatus. CONSTITUTION:A quartz chamber 3 is formed by a double-wall structure having the hollow part 33 surrounded by internal wall 31 and external wall 32, and the chamber 3 is cooled by introducing the cooling water from a water inlet port 34 connected to said hollow part 33. On the occasion of rapidly heating a wafer 5 supported by susceptor 4 with a halogen lamp 2, the chamber 3 itself is kept at the constant temperature and only the wafer 5 is heated by allowing the cooling water to flow into the hollow part 33 of quartz chamber 3 having the double-wall structure from the inlet port 34.
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