| 摘要 |
PURPOSE:To form a contact diffused layer without erasing a fine contact hole by melting (flowing) a BPAG film in steam before opening the hole to sufficiently flatten the surface of a substrate. CONSTITUTION:An LOCOS film 2 formed on a silicon substrate 1, a gate oxide film 3 and a polycrystalline silicon gate layer 4 are formed. A silicon nitride film 6 is deposited on the entire substrate surface of a sample formed with a diffused layer 5 in the substrate 1 at both sides of the layer 4. Then, a BPSG film 7 is deposited on the film 6. Subsequently, a heat treatment is executed in steam for the purpose of shrink-fitting and melting the film 7. Thereafter, with a photoresist as a mask a contact hole 9 is opened by etching. Then, a heat treatment is performed in an atmosphere including phosphine (PH3) to melt second the film 7 and to form the contact diffused layer.
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