| 摘要 |
PURPOSE:To restrict the thickness distribution of silicon nitride film within the practical limits of semiconductor device and achieve a high yield rate for industrial production by setting high frequency voltage frequency to be impressed to a parallel plate electrode at a given area. CONSTITUTION:Free passage of a parallel plate electrode 3 from an upper part to a plasma chamber 2 of a vapor growth device 1 can be obtained by making the electrode 3 go up and down. systems of evacuation and gas introduction are connected to the chamber 2 and an external heater 4 is installed at the outside of the chamber 2. Group plate electrodes 3a and 3b are alternately fitted in the electrode 3 at given intervals and wafers 6 are placed and fixed on each plate electrode 5. The inside of chamber 2 in this device 1 is heated at a given temperature through the external heater 4 and an inside pressure of chamber 2 is adjusted by flowing a mixed gas of silane and ammonia into the chamber with the evacuation of the inside of chamber 2. Then, a high frequency power is supplied to the electrode 3 and frequency of the high frequency power is set to a given area, thereby maintaining a thickness distribution of silicon nitride film within the practical limits of semiconductor device.
|
