发明名称 ALIGNMENT MARK OF GLASS MASK IN PHOTOLITHOGRAPHY PROCESS
摘要 PURPOSE:To reduce detection time of alignment mark by providing a alignment mark section to carry out positioning with a wafer and a plurality of guide lines which cross at an area near the alignment mark section to a glass mask. CONSTITUTION:A reticule pattern 2 such as chrome which reflects UV light, etc., is formed on the rear of a glass mask. The reticule pattern 2 is constituted by a chip pattern 4 which is enclosed by a plurality of scribe lines 3 provided in a lattice shape lengthwise (Y) and crosswise (X) at a fixed interval. An alignment mark section 5a is provided to a corner of the chip pattern 4, and a reticule line 5b which is a guide line of the alignment mark section 5a is formed on the scribe line 3 at an area near the alignment mark section 5a. According to this constitution, easy detection of the alignment mark section 5a is realized by searching for an intersection of the guide line 5b, and thus detection time of an alignment mark is reduced.
申请公布号 JPH0276214(A) 申请公布日期 1990.03.15
申请号 JP19880226449 申请日期 1988.09.12
申请人 OKI ELECTRIC IND CO LTD 发明人 SUMIYA MASANORI
分类号 G03F9/00;G03F1/42;H01L21/027;H01L21/30 主分类号 G03F9/00
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