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发明名称
IMPURITY DOPING METHOD FOR SEMICONDUCTOR SUBSTRATE
摘要
申请公布号
KR920010694(B1)
申请公布日期
1992.12.12
申请号
KR19880015270
申请日期
1988.11.19
申请人
FUJITSU LTD.
发明人
NAKAMURA, MORITAKA
分类号
H01L21/225;H01L21/311;(IPC1-7):H01L21/18
主分类号
H01L21/225
代理机构
代理人
主权项
地址
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