| 摘要 |
PURPOSE:To greatly improve photoelectric conversion efficiency by forming I type silicon film after formation of silicon nitride films. CONSTITUTION:Substrates 1 are erected closely to each other on a board 2 in a vacuum evacuated to 10<-3> Torr by a vacuum system. This reaction chamber 3 is so constituted that reactive gases and the substrates 1 can be excited and brought into reaction by the high-frequency energy of a high-frequency heating furnace 4 of 1 to 100mHz or can be heated by heaters 5. The reactive gases are introduced from an inlet 9 and are brought into reaction. The reactive gases are formed by mixing compds. SiH4 and SiH2Cl2 of silicon or P or N type impurities and further, reactive gases contg. germanium, tin, lead and/or further nitrogen or oxygen. |
