| 摘要 |
<p>PURPOSE: To remove a particle source, by suppressing the reaction of unreacted gas in a + or - ion state left in a reactor 1, and suppressing the bond of the unreacted gas in the ion state. CONSTITUTION: This is concerned in a method for forming a film of good quality by suppressing the reaction of unreacted gas left in a container 8, a main controller 11 turns on a power unit 12 to supply a current to a door plate electrode 13, and then unreacted gas in the + or - state in the reactor is bonded to a door plate to remove a particle source to the film of good quality and also suppress the lamination while gas supply is interrupted, thereby obtaining the advantage that the uniformity of the film surface is improved.</p> |
