发明名称 METHOD FOR INSPECTING MASK FOR LIGHT EXPOSING
摘要 <p>PURPOSE:To accurately inspect a mask for light exposing having a shape different from design data by receiving the influence of a proximity effect by processing the design data so as to suppress the generation of pseudo defects, thereby forming data for inspection. CONSTITUTION:The data for inspection deforming the data for inspection (dotted line) form the original design data (broken line) is formed only for the point (part within a circle A) where most of the pseudo defects (the parts, such as roundness of the square parts of mask patterns, which are not intrinsic defects, and are recognized erroneously as defect at the time of inspection) are generated in the case of inspection of the mask for light exposing having the fine mask patterns by using a defect inspecting device of a system for comparing and inspecting the design data and the mask patterns. The data for inspection formed in such a manner and the actually formed mask patterns are comparatively inspected. As a result, the mask for light exposing having the shape different from the design data by receiving the influence of the proximity effect in such a case of isolated existence of the fine patterns is correctly inspected.</p>
申请公布号 JPH06342207(A) 申请公布日期 1994.12.13
申请号 JP19930130426 申请日期 1993.06.01
申请人 MATSUSHITA ELECTRON CORP 发明人 WATANABE HISASHI;SUGIURA EMIKO;NAKAJIMA MASATOSHI
分类号 G01B11/24;G03F1/36;G03F1/84;G06T1/00;G06T7/00;G06T7/60;H01L21/027;(IPC1-7):G03F1/08;G06F15/62;G06F15/70 主分类号 G01B11/24
代理机构 代理人
主权项
地址