发明名称 ACTIVE MATRIX SUBSTRATE AND ITS PRODUCTION
摘要 <p>PURPOSE:To improve display quality by forming data lines or gate lines or both thereof in the recessed parts formed on an insulating substrate and setting the height of these signal wirings lower than pixel electrodes. CONSTITUTION:The recessed parts 202 are formed in the patterns corresponding to data lines on the insulating substrate 201 and semiconductor thin films 203 connecting to the inside of the recessed parts 202 and the surface of the substrate 201 are formed with the continuous semiconductor thin film 203 and are thermally oxidized to form gate insulating films 204. Polycrystalline silicone 205 is then formed and impurity ions are implanted thereon to form source and drain regions 205A, 205B. A first interlayer insulating film 206 is formed and is opened with contact holes 207. An Al film is formed and is subjected to pattern etching, by which data lines 208 are formed. A second interlayer insulating film 209 is then formed and is opened with second contact holes 210. The pixel electrodes 211 connected to the drain electrodes are formed of ITO films. The height of the data lines 208 is set so as to be lower than the pixel electrodes 211.</p>
申请公布号 JPH06342171(A) 申请公布日期 1994.12.13
申请号 JP19930131878 申请日期 1993.06.02
申请人 KODO EIZO GIJUTSU KENKYUSHO:KK 发明人 YUDASAKA KAZUO
分类号 G02F1/1343;G02F1/136;G02F1/1368;H01L21/3205;H01L21/336;H01L23/52;H01L29/78;H01L29/786;(IPC1-7):G02F1/136;H01L29/784;H01L21/320;G02F1/134 主分类号 G02F1/1343
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