| 摘要 |
<p>A method of producing sealed cavity structures in the surface layer of a selectively etchable substrate (1), comprises: a) depositing a masking layer (2) of etchable material on the substrate (1), b) by means of etching, opening at least one hole (3) in the masking layer (2) down to the substrate surface, c) through said hole or holes (3) in the masking layer (2) selectively etching the substrate (1) in under the masking layer (2) so as to form one more cavities (4) which extend under the masking layer, and d) sealing said hole or holes (3) in the masking layer (2).</p> |
