| 摘要 |
A light emitting layer forming section (10) having a double heterojunction structure, comprising an n-type clad layer (3) made of an AlGaInP compound semiconductor, an active layer (4), and a p-type clad layer (5), formed in this order epitaxially on an n-type GaAs semiconductor substrate (1). The clad layer (5) has a carrier concentration of 1x10<16> cm<-3> to 5x10<16> cm<-3>. A window layer (6) of p-type AlGaAs compound semiconductor is grown on the clad layer (5) and p- and n-side electrodes (8 and 9) are provided. The diffusion of the p-type impurities contained in the clad layer (5) into the window layer (6) is minimized during the growth of the crystal of the layer (6), and hence the light emitting efficiency and luminance of the element are improved.
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