Semiconductor light emission element e.g. LED

摘要

A semiconductor light emission element has a semiconductor multilayer structure (12), which is formed on a substrate (1) and which comprises an active layer (4) between first and second conductivity type cover layers (3, 5), and a second conductivity type current diffusion layer (6) of Ga1-xInxP (x = 0 to 1, exclusive) provided on the multilayer structure (12). Also claimed is production of the above LED, including a first conductivity type current blocking layer between the multilayer structure and the current diffusion layer and a pair of front and back face electrodes, by (a) producing the multilayer structure on the substrate; (b) forming an Al-free protective layer and an Al-containing compound semiconductor layer on the multilayer structure; and (c) forming the current blocking layer on a portion of the multilayer structure by selectively etching the Al-containing compound semiconductor layer. Further claimed is a similar LED in which the In molar fraction 'x' of the current diffusion layer varies in the thickness direction.