| 发明名称 |
Deuterium-treated semiconductor devices |
| 摘要 |
Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.
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| 申请公布号 |
US5872387(A) |
申请公布日期 |
1999.02.16 |
| 申请号 |
US19960586411 |
申请日期 |
1996.01.16 |
| 申请人 |
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS |
发明人 |
LYDING, JOSEPH W.;HESS, KARL |
| 分类号 |
H01L29/78;H01L21/28;H01L21/30;H01L21/324;H01L29/51;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 地址 |
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