| 摘要 |
A gate structure including semiconductor regions each having a high impurity-concentration and being formed within respective one of recessed portions provided in a surface of a first semiconductor substrate, and then a second semiconductor substrate is brought into contact with the surface of the first semiconductor substrate. The gate structure may be formed such that each of the recessed portions is completely or partially filled with the gate structure. When the gate structure includes electrically good-conductive films of a high melting point metal or the like each formed in respective one of the recessed portions, the gate resistance can be further decreased.
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