INTERNAL VOLTAGE GENERATOR OF SEMICONDUCTOR MEMORY DEVICE

摘要

An internal voltage generator of semiconductor memory device is provided to compensate for degradation of operation property by artificially increasing an output voltage level of a reference voltage generation part. A first operation amplifier(11) of a reference voltage generation part(100) comprises a non-inverting terminal and an inverting terminal. The non-inverting terminal receives a first reference voltage(VREF) supplied from a reference voltage generator. The inverting terminal receives a reference feedback voltage(VFEED). The first operation amplifier generates a reference amplification signal(VAO) by amplifying difference of the first reference voltage and the reference feedback voltage. A first voltage control part(12) supplies a current to a first voltage division part(115) in response to the reference amplification signal. The first voltage division part comprises a plurality of resistors(R1~R5) which is serially connected. A second reference voltage(VREFP) generated from a first node(N1) of the first voltage division part is supplied to an internal voltage generation part(20). The reference feedback voltage generated from a second node(N2) of the first voltage division part is supplied to the inverting terminal of the first operation amplifier. A level control part(105) comprises a plurality of NMOS transistors(MN1, MN2), a NOT gate(116), and a NOR gate(117).