| 摘要 |
PURPOSE:To solve problems such as the difficulty of transfer exposure of a high-precision layer due to a decrease in the precision of pattern transfer onto a lower layer caused by formation of an interlayer and due to adverse influence of diffracted light from an upper layer pattern edge by using an Si-containing negative resist as the intermediate layer of a three-layer structure resist. CONSTITUTION:A substrate 1 is spread with a three-layer structure resist made of a lower layer 2 of positive resist, an intermediate layer 3 of negative resist, and an upper layer 4 of positive resist in this order. Next, the upper layer 4 is patterned by exposure and development, and an obtained upper layer pattern 4' is used as a mask to pattern the intermediate layer 3 by reactive ion etching. The upper layer pattern 4' is transferred onto the lower layer 2 by batch exposure and development. In such a case, an Si-containing negative resist (PACS and the like whose photoabsorption coefficient is about 0.6mum<-1> to a wavelength near 190-230nm) whose photoabsorption coefficient is between those of the lower and upper layers 2,4 to the above-mentioned batch exposure light. |
